Proceedings of nanoGe Spring Meeting 2022 (NSM22)
DOI: https://doi.org/10.29363/nanoge.nsm.2022.066
Publication date: 7th February 2022
The broad implementation of halide perovskites into electronic applications beyond photovoltaics relies on effectively tuning free carrier concentrations in this class of semiconductors. However, doping in these materials remains difficult and is far from being fully understood. Specifically, detailed knowledge on the perovskite-dopant chemical interactions is key to enable effective doping strategies. This talk will cover our recent work on carrier compensation in inherently p-type MASnxPb1-xI3 (where MA is methylammonium) by employing an n-type molecular dopant, i.e. n-DMBI. We observe a decrease in free hole concentration of nearly one order of magnitude, an increase in Seebeck coefficient and a shallower perovskite Fermi level, in consistence with electron donation from n-DMBI. This is shown to occur via dopant hydride loss and subsequent radical transfer to perovskite. We then find that only oxidised molecular dopant binds onto perovskite surface Sn sites via Lewis acid-base interactions, suggesting that charge transfer is facilitated by dopant/perovskite chemical coordination. We expect the detailed chemical insight on charge transfer doping provided herein to give design guidelines towards future molecular dopants for perovskite-based technologies.
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