Proceedings of nanoGe Spring Meeting 2022 (NSM22)
DOI: https://doi.org/10.29363/nanoge.nsm.2022.057
Publication date: 7th February 2022
Bismuth-halide-based semiconductors have gained increasing attention for optoelectronics, owing to their low toxicity, high environmental stability under ambient conditions, and easy processability by a wide range of scalable methods. In particular, bismuth-halide-based materials have been proposed to replicate key features of the electronic structure of lead-halide perovskites that may give rise to defect tolerance, but without the toxicity limitations of the latter [1]. This talk will examine in detail the case of bismuth oxyiodide (BiOI; a layered compound), focussing on its carrier dynamics, defect tolerance and charge transport. Through density functional theory calculations, we show that the most common point defects in BiOI are resonant within the bands, or shallow within the bandgap [2]. To experimentally probe the defect tolerance of BiOI, we intentionally introduce defect states, and probe how these influence the electronic structure (as measured by photoemission spectroscopy) and charge-carrier lifetime (as measured by transient absorption spectroscopy) [3]. We develop an all-inorganic device structure, and devise a route to control the preferred orientation of the vapour-deposited BiOI films to achieve photovoltaics with external quantum efficiencies reaching up to 80% at 450 nm wavelength [2,4]. Further, we demonstrate the strong potential of BiOI for indoor light harvesting to power Internet of Things electronics [5]. We finish with a discussion of the key factors that will need to be addressed in order to further improve the performance of this material in optoelectronics, focussing especially on the role of carrier-phonon coupling on charge-carrier transport and dynamics.
R. L. Z. Hoye acknowledges funding from the Royal Academy of Engineering through the Research Fellowships scheme (No.: RF\201718\1701)
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