Proceedings of International Conference on Perovskite Thin Film Photovoltaics and Perovskite Photonics and Optoelectronics (NIPHO24)
Publication date: 25th April 2024
Despite the rapid efficiency increase, tin halide perovskite solar cells lay significantly behind lead-based devices with the highest reported efficiency of 15.7 %. The main reason is attributed to the instability of Sn2+, which easily oxidizes to Sn4+ creating Sn vacancies and increasing the open-circuit voltage loss. In this work, we implemented tin thiocyanate (Sn(SCN)2) as an additive for passivating bulk defects of a germanium-doped tin halide perovskite film. The presence of additional Sn2+ and SCN- ions is expected to reduce Sn and iodine vacancies, leading to reduced non-radiative recombination and a longer charge-carrier dynamic. Moreover, Sn(SCN)2 is found to induce a higher film crystallinity in particular along the (100) and (200) planes. Finally, the passivated devices showed improved photovoltaic parameters with the best open-circuit voltage of 0.716 V, and the best efficiency of 12.22 %, compared to 0.647 V and 10.20 % for the reference device. In addition, the passivated solar cell retains 88.7 % of its initial efficiency after 80 minutes of illumination under 100 mW cm-2, which is substantially better than the control device which reaches 82.6 % of its initial power conversion efficiency after only 30 minutes. This work demonstrates the passivation potential of tin-based additives, which combined with other counterions give a relatively large space of choices for passivation of Sn-based perovskites.