Beyond Spiro-OMeTAD: Utilizing Dipoles for Interface Modification of CsPbI3 and P3HT for Enhanced Charge Extraction.
Zafar Iqbal a, Antonio Abate a
a Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, 14109 Berlin, Germany.
NIPHO
Proceedings of International Conference on Perovskite Thin Film Photovoltaics and Perovskite Photonics and Optoelectronics (NIPHO24)
Sardinia, Italy, 2024 June 17th - 18th
Organizers: Giulia Grancini, Francesca Brunetti and Maria Antonietta Loi
Oral, Zafar Iqbal, presentation 020
Publication date: 25th April 2024

The CsPbI3 perovskite halide is the most stable chemical composition for perovskite solar cell applications. However, careful consideration is required for engineering its interfaces to achieve better alignment of energy levels, charge extraction, and power conversion efficiency. Generally, the Spiro-OMeTAD molecule serves as the hole transport layer (HTL) in perovskite solar cells, but its sensitivity to temperature and high-cost pose challenges for commercial applications. Alternatively, poly(3-hexylthiophene) (P3HT) polymer molecule can be utilized as a hole transport layer; however, the interface between P3HT and perovskite often leads to non-radiative recombination. In this study, we introduce a dipole-forming molecule, n-hexyl trimethyl ammonium bromide (HTAB), which forms a 2D layer on the perovskite surface, reduces iodine defects, and improves charge extraction at the interface. As a result, we achieve an impressive Voc of 1.14 V for CsPbI3 and P3HT-based devices, showcasing the effectiveness of our approach interface modification in enhancing device performance.

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