Proceedings of International Conference on Perovskite Thin Film Photovoltaics and Perovskite Photonics and Optoelectronics (NIPHO24)
Publication date: 25th April 2024
Perovskite-inspired materials (PIMs) comprising Group VA pnictogen cations, such as antimony (III) (Sb3+) and bismuth (III) (Bi3+), have recently gained popularity as eco-friendly and air-stable absorbers [1]. Among them, two-dimensional Cu2AgBiI6 (CABI) [2] and A3Sb2X9 [3] possess quasi-direct to direct bandgaps suitable for photovoltaic and other optoelectronic device applications [1]. Nevertheless, PIMs often crystallize in disordered structures with a large number of surface defects/vacancies and grain boundaries, which explains their modest performance as photovoltaic absorbers.
Recently, we have employed several compositional engineering strategies to enhance the intrinsic defect tolerance of pnictogen-based PIMs at each of the crystallographic sites (A, B, X) of the PIM structure. In this talk, I will present our most recent findings on cation and/or anion mixing in bismuth-based PIMs. In particular, I will discuss the effect of composition engineering on film morphology, structure, charge carrier transport, and properties of corresponding photovoltaics. These studies highlight the significant yet unexplored potential of pnictogen-based halides for low-toxicity and air-stable optoelectronics with competitive performance.
P.V. acknowledges the financial support of Jane and Aatos Erkko Foundation within the SOL-TECH project. P.V. also thanks Research Council of Finland, Decision No. 347772. This work was part of the Research Council of Finland Flagship Programme, Photonics Research, and Innovation (PREIN), Decision No. 320165.
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