Modification of CuSCN as a hole transport layer for highly efficient and stable perovskite solar cells
Tzu-Sen Su a, Nideesh Perumbalathodi b, Tzu-Chien Wei b c
a National Taiwan University of Science and Technology (TW)
b National Tsing Hua University (TW)
c National Yang Ming Chiao Tung University (TW)
NIPHO
Proceedings of International Conference on Perovskite Thin Film Photovoltaics and Perovskite Photonics and Optoelectronics (NIPHO24)
Sardinia, Italy, 2024 June 17th - 18th
Organizers: Giulia Grancini, Francesca Brunetti and Maria Antonietta Loi
Oral, Tzu-Sen Su, presentation 002
Publication date: 25th April 2024

Perovskite solar cells (PSCs) are an exciting advancement in energy technology that is both efficient and cost-effective. Cuprous thiocyanate (CuSCN) appears to be a feasible inorganic hole transport material (HTM) for PSCs due to its high hole mobility and strong thermal stability. The use of polar sulfide solvents, particularly diethyl sulfide (DES), during CuSCN film deposition causes issues, affecting the perovskite layer and compromising the PVSK/CuSCN interface contact. The perovskite family is currently investigating potential inorganic HTMs for commercial uses. However, while solution-based film synthesis is less expensive, it introduces DES residue into CuSCN films, resulting in perovskite degradation and device instability. As a consequence, we introduce a novel anti-solvent approach based on ethyl ether (DEE) for recovering DES residue from CuSCN films. This treatment improves film shape and uniformity while reducing flaws, resulting in enhanced PSC performance and stability. This novel method has considerable promise for improving the engineering of CuSCN HTMs and contributing to the specialized commercialization of PSC technology.

Ministry of Science and Technology, Taiwan (108-2221-E-007 -102 -MY3) and (112-2222-E-011 -002 -MY3)

Ministry of Economic Affairs, Taiwan (E111-EC-17-A-08-S6-013)

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