Proceedings of International Conference on Perovskite Thin Film Photovoltaics and Perovskite Photonics and Optoelectronics (NIPHO23)
DOI: https://doi.org/10.29363/nanoge.nipho.2023.004
Publication date: 3rd April 2023
Metal-halide perovskites have attracted extensive interest due to the high efficiencies obtained in photovoltaic devices.[1] The main drawback of this technology is the presence of lead which is a well-known and dreaded environmental pollutant. Also at very low concentrations, it is the cause of many diseases in humans, animals and plants. Moreover, the ionic nature of Pb2+ is at the origin of a very efficient uptake rate from the ground to plants.[2] For this reason many different approaches have been studied to tackle this concern, and the substitution of lead with tin is probably the most promising.[3],[4] Tin is an element of the same group of lead and can take its place in the perovskite lattice. Compared to lead, tin, is much more sensible to oxidation and can easily be oxidized from Sn2+ to Sn4+.[5],[6] On one side this behaviour is at the origin of the lesser toxicity of tin respect to lead but on the other side it represents a severe limitation during the processing of the material, as the formation of Sn4+ reduces the photovoltaic device performances. DMSO, which is one of the most used solvents for tin perovskites processing, has been identified as a source of oxidation due to a redox side reaction. Here we show that 4-tert-Butylpyridine (tBP) is a promising substitute for DMSO as it can mimic and exceed its complexation ability to tin iodide.[7] As SnI2 has stronger Lewis acidity than PbI2 it reacts faster with the organic salts leading to rapid crystallization of perovskite crystals which leads to a poor morphology with many pinholes. The stronger interaction between SnI2 and tBP slows the crystallization process leading to the formation of a smooth defect-free perovskite film. We show that, together with the better morphology, perovskite synthesised using tBP possess better electronic properties in terms of defect density and hole density. Tin perovskite prepared using our procedure can be used to prepare photovoltaic device with a maximum PCE of 8.3% in a reproducible manner.
This work was supported by the Italian Ministry of Ecological Transition in the framework of the Operating Agreement with ENEA for Mission Innovation. Funding from the European Research Council (Grant Number, 804519) is acknowledged.