Proceedings of International Conference on Perovskite Thin Film Photovoltaics and Perovskite Photonics and Optoelectronics (NIPHO20)
Publication date: 25th November 2019
Even with the staggering amount of research that has come out in recent years regarding the kinetics of charge recombination in metal-halide perovskite films, there are still unanswered questions regarding the exact molecular mechanism and the role and nature of defects in these processes. For instance, photoluminescence (PL) intensity of the perovskite thin films shows greatly varying dependencies on the excitation fluence when measured by different laboratories at different experimental conditions [1-4]. We utilize an optimized home-built PL microscopy setup to carry out an extensive investigation of the photoluminescence intensity dependence of the CH3NH3PbI3 thin film on the power and repetition rate of the pulsed excitation source. By changing the average excitation power density and frequency over a significantly wide range, from 1 uW/cm2 to 100 W/cm2 and 80MHz to 1Hz respectively, it was found that by decreasing the repetition rate, the PL intensity eventually deviates from the quasi-CW dependence and ultimately becomes independent of the frequency (single-pulse regime). Moreover, this transition frequency from the quasi-CW regime to the single-pulse regime strongly depends on the pulse energy. Put another way, at low excitation pulse energy the frequency threshold that separates these two regimes is met at lower repetition rates compared to higher excitation pulse energy. This means that by varying the pulse energy at a given repetition rate one can move from the CW-regime to the single-pulse regime and further explains variations of the PL intensity dependences on the pulse energy and the general difficulty to explain them quantitatively. Numerical simulations were carried out to fit the experimental dependencies by several theoretical models.
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