Probing Defects in Perovskites and their Impact on Optoelectronic Performance using Nanoprobe Microscopy
David Fenning a
a University of California San Diego, Gilman Drive, 9500, San Diego, United States
NIPHO
Proceedings of nanoGe International Conference on Perovskite Solar Cells, Photonics and Optoelectronics (NIPHO19)
International Conference on Perovskite Photonics and Optoelectronics
Jerusalem, Israel, 2019 February 24th - 27th
Organizers: Lioz Etgar and Paul Meredith
Invited Speaker, David Fenning, presentation 040
DOI: https://doi.org/10.29363/nanoge.nipho.2019.040
Publication date: 21st November 2018

Halide perovskites have attracted widespread attention for their reported defect tolerance, in stark contrast to traditional semiconductors. In this contribution, I will discuss nanoprobe X-ray microscopy investigations of the relationship between the defects that do appear in thin film hybrid perovskites and optoelectronic performance and stability. In these beam sensitive materials, the weaker X-ray matter interaction relative to E-beam microscopy enables X-ray microscopy to provide a close look at the nanoscale elemental and structural complexities of perovskites. Using a series of model thin film materials, we reveal a wide-ranging heterogeneity in local chemistry and structure and link these nanoscopic variations to impacts on charge collection. We provide direct species-specific evidence of halide migration and its close correlation with photoluminescence and use nano-diffraction to understand the effects of varying crystallinity in perovskite crystals at the nanoscale. Finally, I will share insights from our nanoprobe study of non-stoichiometry and second-phase formation in triple-and quaternary-cation perovskite solar cells to provide feedback for improving performance. By understanding and mitigating defects in the bulk and at interfaces, we aim to systematically accelerate the development of these optoelectronic materials.

The support of the Hellman Foundation and the California Energy Commission (EPC-16-050) are gratefully acknowledged.

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