Proceedings of Materials for Sustainable Development Conference (MAT-SUS) (NFM22)
Publication date: 11th July 2022
The characteristics of multi cation FAxMA1-xPbI3 based write once only many (WORM) device were controlled by a cation exchage process as part of a technique to alter FA configurations in FAxMA1-xPbI3 films. Interestingly, it was found that an increase in the FA configurations in FAxMA1-xPbI3 film resulted in a completely inactive WORM device. Such a memory characteristic of a WORM device was attributed to the high iodide vacancy (VI) ion migration energy that prevent the formation of VI conduvctive filament (CFs) with the increase in the FA configuration in FAxMA1-xPbI3 film. By comparing the active and inactive FAxMA1-xPbI3 WORM device, the formation of CFs within FAxMA1-xPbI3 WORM device were investigated using conductive atomic force microscopy. Our results showed that the CFs were dominantly formed around grain boundaries regions, while some grain interior regions showed very low conductivity. These studies on the CF formation mechanism provide a better understanding of RS memory characteristics in multi cation perovskite materials.
This research was supported by National Research Foundation of Korea (NRF) funded by Ministry of Science and ICT (2022R1I1A1A01073120).
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