Proceedings of Materials for Sustainable Development Conference (MAT-SUS) (NFM22)
DOI: https://doi.org/10.29363/nanoge.nfm.2022.188
Publication date: 11th July 2022
Perovskite semiconductors differ from most inorganic and organic semiconductors due to the presence of mobile ions in the active layer. Although the phenomenon is intensively investigated, important questions remain, such as the dominant species and overall density of the mobile ions and their exact impact on the device stability and steady-state power conversion efficiency (PCE). In this talk, we propose a simple method to estimate the efficiency loss due to mobile ions via “fast-hysteresis” measurements by preventing the perturbation of mobile ions out of their equilibrium position at fast scan speeds (1000 V/s) and choosing a suitable prebias condition.[1,2] The ”ion-free” PCE of fresh pin-type cells with low levels of apparent hysteresis at typical scan speeds (100 mV/s) is between 1.5-3% higher than the steady-state PCE. However, with device aging, e.g. under elevated temperatures or continuous light illumination, the ionic losses increase substantially. This represents the dominant degradation loss of a triple cation based pin-type perovskite cell. The enhanced ionic losses with aging are also accompanied by a significant increase of the mobile ion density. Finally, we will discuss how the stoichiometry and in particular the PbI2 excess influence the ionic losses and how these losses vary with the charge transport properties. Finally, an outlook is presented on how these losses affect the degradation of solution processed perovskite based tandem cells. Overall, the proposed methods to quantify the ion-induced field screening and PCE losses allow for a better understanding of several key phenomena in perovskite solar cells and shed light on the complex device degradation process.
References:
1 Le Corre, V. M. et al. Sol. RRL 2100772 (2022), DOI: 10.1002/solr.202100772
2 Thiesbrummel, J. et al. Adv. Energy Mater. 11, 2101447 (2021), DOI: 10.1002/aenm.202101447
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