Unravelling the Charge-Carriers Dynamics in Multication Mixed Sn-Pb Halide Perovskites
Jasmeen Nespoli a, Snigdha Lal a, Valentina Caselli a, Bahiya Ibrahim a, Tom Savenije a
a Department of Chemical Engineering, Delft University of Technology Van der Maasweg, Van der Maasweg, 9, Delft, Netherlands
Materials for Sustainable Development Conference (MATSUS)
Proceedings of Materials for Sustainable Development Conference (MAT-SUS) (NFM22)
#PbFreePero - The potential of lead-free perovskites: synthesis, properties, and applications
Barcelona, Spain, 2022 October 24th - 28th
Organizers: Loreta Muscarella, Eline Hutter and Hendrik Bolink
Contributed talk, Jasmeen Nespoli, presentation 081
DOI: https://doi.org/10.29363/nanoge.nfm.2022.081
Publication date: 11th July 2022

Over the past few years, mixed Sn-Pb perovskites came to the fore as promising absorbing materials for single- and multi-junction solar cells due to the possibility of manipulating the bandgap by changing the Sn to Pb ratio [1]. However, the opto-electronic properties of tin-containing perovskites are adversely affected by intrinsic and extrinsic factors leading to doping [2][3]. In this work, we produced different Sn-Pb perovskites thin-films of composition Cs0.25FA0.75SnxPb1-xI3 with varying tin content between x=0 and x=0.6 via antisolvent spin-coating. In order to improve the properties of the perovskite layers, 20 mol% SnF2 was added to the tin precursor solution. We studied the effect of light on the background conductivity by means of microwave conductivity techniques. In particular, we looked at the light-induced carge-carriers dynamics before and after exposing the perovskite thin-films to AM1.5 illumination. For the pristine layers, we found charge-carriers mobilities reaching μ ~ 25 cm2/V·s and lifetimes t > 1 μs, which are only marginally dependent on the Sn to Pb ratio. Exposure to external factors, such as ambient air, leads to a severe increase in background conductivity and shortened charge-carriers lifetimes. Lastly, a potential explanation of the degradation mechanism is proposed on basis of defect chemistry.

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