Proceedings of Materials for Sustainable Development Conference (MAT-SUS) (NFM22)
DOI: https://doi.org/10.29363/nanoge.nfm.2022.025
Publication date: 11th July 2022
Inherently narrowband near-infrared organic photodetectors (NIR-OPD) are highly desired for many applications, including biological imaging and surveillance. To obtain a narrowband response, one of the most used approaches is to integrate a photodiode in an optical cavity configuration. With manipulating the cavity length, tuneable wavelength-selective NIR-OPDs were realized[1]. However, they suffer from a low external quantum efficiency (EQE) and strongly rely on the used material or on a nano-photonic device architecture. Here, we demonstrate a general and facile approach towards wavelength-selective NIR-detection through intentionally n-doping 500-600 nm-thick nonfullerene blends. We show that a electron-donating amine-interlayer can induce n-doping, resulting in a localized electric field near the anode and selective collection of photo-generated carriers in this region. As only weakly absorbed photons reach this region, the devices have a narrowband response at wavelengths close to the absorption onset of the blends with a high spectral rejection ratio. These spectrally selective NIR-OPDs exhibit EQEs of ~20-30% at NIR wavelengths of 900-1100 nm, with a full-width-at-half- maximum of ≤50 nm, as well as detectivities of >1012 Jones (to be published in Nature communications soon).
Q.L. acknowledges financial support from the European Union's Horizon 2020 research and innovation program under the Marie-Curie Grant Agreement No. 88279.
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