Proceedings of nanoGe Fall Meeting 2021 (NFM21)
DOI: https://doi.org/10.29363/nanoge.nfm.2021.239
Publication date: 23rd September 2021
Organic photovoltaic (OPV) devices have recently experienced a fast rise in power conversion efficiency (PCE) with the introduction of non-fullerene acceptor (NFA) molecules, reaching above 18 % PCE today, placing device stability as the main focus area for this technology. Transition metal oxides have been demonstrated as an important class of materials for OPV devices, where they serve as charge carrier selective interlayers for efficient electron and hole extraction. In organic photovoltaics (OPV), the introduction of the high-performing non-fullerene acceptors has set new requirements on the embedded interlayers, as e.g. new interlayer related instabilities have recently been reported, making a thorough understanding of such interface effects highly important for the further development of this field and technology.
In this presentation, recent progress made within sputtered metal oxide electron [1,2] and hole [3] transport interlayers for thin film organic photovoltaics is presented. Supported by a variety of surface science characterization techniques, the role of e.g. microstructure, work function, oxygen vacancies and energy band alignment, on the performance of such interlayers in organic photovoltaic devices is discussed. This includes a focus on their positive impact on non-fullerene acceptor based OPV device stability, as compared to conventional metal oxide interlayers. Here, new results focusing on the integration of 2D materials in NFA OPV will also be elaborated on. Finally, an outlook addressing up-scaling of such metal oxides for new OPV applications will be presented.
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