Sub-nanogray detection limit in methylammonium lead triiodide X-ray imaging detectors
Sarah Deumel a b, Albert J.J.M. van Breemen c, Bart Peeters c, Joris Maas c, Hylke B. Akkerman c, Eric A. Meulenkamp c, Gerwin H. Gelinck c, Judith E. Huerdler a, Oliver Schmidt a, Wolfgang Heiß b, Sandro F. Tedde a
a Siemens Healthineers AG, Technology Excellence, Henkestraße, 127, Erlangen, Germany
b Friedrich-Alexander-Universität Erlangen-Nürnberg, Institute Materials for Electronics and Energy Technology, Department of Materials Science and Engineering, Energy Campus Nürnberg, Fürther Straße, 250, Nürnberg, Germany
c Holst Centre/TNO
Materials for Sustainable Development Conference (MATSUS)
Proceedings of nanoGe Fall Meeting 2021 (NFM21)
#RadDet21. Radiation Detection Semiconductor Materials, Physics, and Devices
Online, Spain, 2021 October 18th - 22nd
Organizers: Michael Saliba and Mahshid Ahmadi
Contributed talk, Sarah Deumel, presentation 177
DOI: https://doi.org/10.29363/nanoge.nfm.2021.177
Publication date: 23rd September 2021

Advances in medical imaging relay equally on enhancements in computing power required by the increasing demand of machine learning and further material and technology improvements which will lead to better image quality and medical outcomes. Hybrid inorganic-organic perovskite materials like methylammonium lead triiodide (MAPbI3) promise direct conversion detectors with higher image quality, owing to their strong X-ray absorption, high electron and hole diffusion lengths with high charge carrier mobility and long carrier lifetime. However, their incorporation into pixelated sensing arrays remains challenging. Here we show a novel manufacturing process that decouples the fabrication of the several micrometre thick absorber layer and its integration onto an amorphous Silicon transistor backplane. Since no consideration of the limitations of the backplane electronics is necessary, the options for the production parameters of the wafers are not restricted. We chose a so-called mechanical soft-sintering approach for the fabrication of the 230 µm thick and freestanding MAPbI3 wafer. A photoresist grid functions as a mechanical anchor and recrystallized MAPbI3 acts as an adhesion promoter for the soft-sintered absorber layer. The resulting X-ray imaging detector with 508 pixels per inch combines a low detection limit of 0.22 nGyair frame-1, a sensitivity of 1060 µCGyair-1cm-2 with a high spatial resolution of 6 line-pairs mm-1. In conclusion, polycrystalline MAPbI3 X-ray imaging detectors provide a very high potential to stable and excellent detection over the whole energy range of X-ray application. Our fabrication technology offers the possibility of simply scale-up to large detector areas.

This work has received funding from the European Union’s Horizon 2020 research and innovation program under the Photonics Public Private Partnership (www.photonics21.org) with the project PEROXIS under the grant agreement N° 871336

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