Recombination and Localization: Unfolding The Pathways Behind Conductivity Losses in Cs2AgBiBr6 Thin Films
Huygen Jöbsis a, Valentina Caselli b, Sven Askes c, Erik Garnett c, Tom Savenije b, Freddy Rabouw a, Eline Hutter a
a Inorganic Chemistry and Catalysis, Debye Institute for Nanomaterials Science, Utrecht University
b Department of Chemical Engineering, Delft University of Technology (TU Delft), The Netherlands, Netherlands
c Center for Nanophotonics, AMOLF, Amsterdam, The Netherlands, Science Park 104, Amsterdam, Netherlands
Materials for Sustainable Development Conference (MATSUS)
Proceedings of nanoGe Fall Meeting 2021 (NFM21)
#LightMatter21. Light-Matter Interactions: From Fundamental Spectroscopy to Materials Design
Online, Spain, 2021 October 18th - 22nd
Organizers: Linn Leppert and Marina Filip
Contributed talk, Huygen Jöbsis, presentation 111
DOI: https://doi.org/10.29363/nanoge.nfm.2021.111
Publication date: 23rd September 2021

Lead-halide perovskite thin films have successfully been incorporated as light-absorbing and -emitting layers in a wide range of optoelectronic applications.[1,2] Cs2AgBiBr6 (CABB) has been proposed as a promising non-toxic alternative to lead-based perovskites. However, the indirect bandgap and low charge carrier collection efficiencies remain an obstacle for the incorporation of CABB in optoelectronic applications.[3] The limited charge carrier extraction has been ascribed to the high trap density and strong electron-phonon coupling, compared to its lead-containing analogues, resulting in fast charge carrier localization and low charge carrier mobilities. On the other hand, transient absorption experiments show a long-lived charge carrier lifetime ranging over several microseconds.[4] Moreover, at elevated temperatures mobile carriers are observed for microseconds after photoexcitation, highlighting CABB as a potential alternative for lead-halide analogues.[5]

To study the (free) charge-carrier dynamics we have performed transient absorption (TA) spectroscopy and time-resolved microwave conductivity (TRMC) experiments on CABB thin films on nanosecond to microsecond timescales. TA spectroscopy revealed that the charge carrier density decays on a 40-nanosecond timescale but a fraction of the photogenerated holes near the valence band maximum have a lifetime ranging over several microseconds. TRMC measurements showed that these long-lived carriers are, however, not mobile. Comparison of the TRMC and TA traces shows that the conductivity loss is the result of a combined effect of charge carrier loss and localization. Finally, we estimate that the charge carrier diffusion length is ca. 100 nm. This is of the same order of magnitude as the grain size, suggesting that grain boundaries are an important contributor to charge-carrier loss.

Huygen Jöbsis and Eline Hutter acknowledge funding from the Dutch Research Council (NWO) under the grant number VI.Veni.192.034. Huygen Jöbsis and Eline Hutter are further supported by the Advanced Research Center Chemical Building Blocks Consortium (ARC CBBC). Valentina Caselli and Tom Savenije acknowledge funding from the Dutch Research Council (NWO), grant number 739.017.004. Sven Askes acknowledges funding from the Dutch Research Council (NWO), grant number VI.Veni.192.062.

© FUNDACIO DE LA COMUNITAT VALENCIANA SCITO
We use our own and third party cookies for analysing and measuring usage of our website to improve our services. If you continue browsing, we consider accepting its use. You can check our Cookies Policy in which you will also find how to configure your web browser for the use of cookies. More info