Proceedings of nanoGe Fall Meeting 2021 (NFM21)
DOI: https://doi.org/10.29363/nanoge.nfm.2021.109
Publication date: 23rd September 2021
Halide perovskites are well known as promising candidates for photovoltaics and light-emitting diodes. Additionally, promising thermoelectric performance has been reported for a small number a halide perovskites, with this class of materials offering ultralow thermal conductivity, good Seebeck coefficients and potential advantages in processing and sustainability. However, there is not yet a good understanding of how thermoelectric performance of halide perovskites can be optimised. This presentation will report the thermoelectric figure of merit (ZT) for hybrid and inorganic perovskites [1,2]. It will discuss the origins of ultralow thermal conductivity and quanitfy both the Lorenz number and the thermal boundary resistance [3] in polycrystalline films. Extrinsic doping and self-doping will be discussed as methods to optimise the thermoelectric figure of merit zT, with values of zT reaching 0.14 in CsSnI3 [2]. The case of self-doping by Sn-oxidation in CsSnI3 will be examined in detail and strategies to improve performance and control the rate of oxidation by modification of deposition procedures, or by using mixed halide and mixed metal stoichiometries will be presented.
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