Unraveling Accelerated Degradation of Perovskite Solar Cells under Continuous Illumination Driven by Thermal Stress
DHRUBA KHADKA a, Yasuhiro SHIRAI a, Masatoshi YANAGIDA a, Kenjiro MIYANO a
a Photovoltaic Materials Group, Center for GREEN Research on Energy and Environmental Materials, National Institute for Materials Science (NIMS), 1 Chome Namiki, Tsukuba, Japan
Materials for Sustainable Development Conference (MATSUS)
Proceedings of nanoGe Fall Meeting 2021 (NFM21)
#PerFun21. Perovskites I: Solar Cells, Lighting, and Related Optoelectronics
Online, Spain, 2021 October 18th - 22nd
Organizers: Eva Unger and Feng Gao
Contributed talk, DHRUBA KHADKA, presentation 104
DOI: https://doi.org/10.29363/nanoge.nfm.2021.104
Publication date: 23rd September 2021

The operational stability of perovskite solar cells (PSCs) is imperative for their commercialization. Although PSCs have almost reached the climax of device performance, their long-term operational stability remains a primary challenge for real-world applications. Despite significant progress through the engineering of the bulk and the interface layer in device configuration, the mechanisms underlying the degradation of HaPSCs under continuous illumination and heat stresses are still ambiguous. We report on the operational stability of devices made with PTAA; (PCE ≈19.32%) or sputtered NiOx (PCE≈15.60%) as a hole-transport layer (HTL) under light (for >1000 h) at 20, 60, and 85 °C to unravel the degradation mechanisms. Our work suggests that degradation is initiated mainly by the deterioration of the HaP bulk at columnar inter-grains and the interfacial junction with the release of I2 gas, which worsens the interface quality. Degradation of the PTAA device was accelerated by the interface deterioration and bulk decomposition initiated by the formation of voids and PbI2 via iodine migration from defective regions at the columnar grain boundaries with the release of I2 gas. The NiOx devices significantly improved the device stability with suppression of the HaP bulk degradation by alleviating internal defect dynamics. Capacitance–voltage analysis showed that the PTAA device develops a much wider defective interface layer than the NiOx device, driven mainly by the chemical reaction of iodine with the interfacial layer. Thus, our results reveal that although the cracking of columnar inter-grains and defective spots in the perovskite bulk is the main origin of device degradation, the nature of the HTL also partly contributes catalysing bulk degradation.

This work was supported by Yazaki Memorial Foundation for Science and Technology.

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