III-V Semiconductor Quantum Dots for Infrared Photodetection
F. Pelayo García de Arquer a b
a ICFO-Institut de Ciències Fotòniques, The Barcelona Institute of Science and Technology, Avinguda Carl Friedrich Gauss, 3, Castelldefels, Spain
b Department of Electrical and Computer Engineering, University of Toronto, Canada, King's College Road, 10, Toronto, Canada
Materials for Sustainable Development Conference (MATSUS)
Proceedings of nanoGe Fall Meeting 2021 (NFM21)
#PhotoDet21. Next Generation Photodetectors
Online, Spain, 2021 October 18th - 22nd
Organizer: Ardalan Armin
Invited Speaker, F. Pelayo García de Arquer, presentation 094
DOI: https://doi.org/10.29363/nanoge.nfm.2021.094
Publication date: 23rd September 2021

The wide spectral tunability of colloidal quantum dot (CQD) absorption, combined with good mobility of photogenerated charge carriers, make them competitive candidates for sensing wavelengths beyond the Si bandgap. I will present an overview of the latest achievements in CQD infrared photodetection fueled by advances in chemistry, materials science and device architectures. I will then touch on some of the remaining challenges, such as the realization of efficient infrared photodetectors that do not rely on heavy metals. I will present recent results on the use of InAs CQDs for infrared optoelectronics, showing how crucial surface management is in this materials family to achieve sufficient mobility, prevent heavy doping, and minimize surface defects – all aspects needed to enable photodetectors that combine high sensitivity (low dark current and noise, and high photoresponse) and fast operation.

© FUNDACIO DE LA COMUNITAT VALENCIANA SCITO
We use our own and third party cookies for analysing and measuring usage of our website to improve our services. If you continue browsing, we consider accepting its use. You can check our Cookies Policy in which you will also find how to configure your web browser for the use of cookies. More info