Proceedings of nanoGe Fall Meeting 2021 (NFM21)
DOI: https://doi.org/10.29363/nanoge.nfm.2021.076
Publication date: 23rd September 2021
The spectacular rise of the photovoltaic power conversion efficiency of hybrid organic-inorganic perovskites to over 25% has conferred them a promising position in the field of photovoltaics and optoelectronics[1]. To further improve their device performance, there is a considerable ongoing research effort on tuning their interfacial energetics with charge selective contacts along with passivating and/or functionalizing their surfaces and interfaces[2]. Among possible charge selective contact materials, nickel oxide (NiO) is commonly used as a hole transporting layer in thin-film optoelectronic technologies based on organic or hybrid materials. Here[3], we computationally scrutinize the interfacial properties of the prototype MAPbI3/NiO heterostructure, which has shown excellent photovoltaic performance and in particular a large open-circuit voltage[4]. We study the valence band energy level alignment between MAPbI3 and NiO considering i) the defect-free system ii) the role of defects and iii) doping. To further highlight the influence of surface dipoles on work functions and absolute valence energy alignment, we present a theoretical methodology, bridging classical electromagnetism and modern atomistic approaches, to show their intimate connection[5]. We demonstrate the potentials of the methodology, through a variety of cases such as surface termination and passivation and/or functionalization. Our approaches to inspect the properties of heterojunctions, interfaces and surface dipoles transcend the limits of halide perovskites and provide computational strategies to fine-tune energy level alignments for optimizing the performance of broader families of optoelectronic devices.
This work was performed with funding from the European Union's Horizon 2020 research and innovation program under grant agreement No. 861985 (PEROCUBE).