Control of carrier density in nanocrystal arrays applied to IR sensing

Charlie Gréboval^a, Yoann Prado^a, Audrey Chu^a^,^b, Ulrich Noumbé^c, Adrien Khalili^a^,^b, Victor Parahyba^d, Grégory Vincent^b, Jean-François Dayen^c, Emmanuel Lhuillier^a

^aSorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, France, Place Jussieu, 4, Paris, France

^bONERA−The French Aerospace Lab, 6, Chemin de la Vauve aux Granges, BP 80100, F-91123 Palaiseau, France, France

^cIPCMS, Université de Strasbourg, CNRS UMR 7504, 23 rue du Loess, B. P. 43, 67034 Strasbourg Cedex 2, France

^dNew Imaging Technologies SA, Impasse de la Noisette, 1, Verrières-le-Buisson, France

Materials for Sustainable Development Conference (MATSUS)
Proceedings of nanoGe Fall Meeting 2021 (NFM21)

#PhotoDet21. Next Generation Photodetectors

Online, Spain, 2021 October 18th - 22nd

Organizer: Ardalan Armin

Contributed talk, Charlie Gréboval, presentation 055
DOI: https://doi.org/10.29363/nanoge.nfm.2021.055
Publication date: 23rd September 2021

I will start with a brief introduction about recent results relative to HgTe nanocrystals (NCs) used to design short wave focal plane arrays (FPAs). I will, in particular, demonstrate an all nanocrystal based active imaging setup where both light emission (from electroluminescence) and light detection are obtained from HgTe NCs.

Then, I will discuss a strategy to design improved sensors based on phototransistors, where the gate enables carrier density tuning and thus dark current reduction. I will discuss two type of gating methods: (i) ionic glass based on LaF₃ and (ii) paraelectric gating using SrTiO₃ (STO). I will show that LaF₃ ionic gates can be used to generate specific operating points leading to the formation of a p-n junction within the transistor channel. The latter is used to enhance charge dissociation. On the other hand, SrTiO₃ is specifically designed for low temperature operation where low noise operations are required. In this regime, conventional high capacitance gating based electrolyte and ionic glass become ineffective due to the freezing of the ions, while STO thanks to the divergence of its dielectric constant is well suited for operation below 100 K which remains typical for mid wave infrared applications. Finally, I will show that phototransistor geometry can be coupled to a light trapping strategy. Here, using a guided mode resonator, I will demonstrate a broad band (>500 nm) enhancement of the light absorption through several resonances.

References:

[1] Field effect transistor and photo transistor of narrow band gap nanocrystal arrays using ionic glasses, C. Gréboval, U. Noumbe, N. Goubet, C. Livache, J. Ramade, J. Qu, A. Chu, B. Martinez, Y. Prado, S. Ithurria, A. Ouerghi, H. Aubin, J.-F. Dayen, E. Lhuillier, Nano Lett 19, 3981 (2019)

[2] Reconfigurable 2D/0D p-n Graphene/HgTe nanocrystal heterostructure for Infrared detection, U. N. Noumbé, C. Gréboval, C. Livache, A. Chu, H. Majjad, L. E. Parra López, L. D. Notemgnou Mouafo, B. Doudin, S. Berciaud, J. Chaste, A. Ouerghi, E. Lhuillier, J.-F. Dayen, ACS Nano 14, 4567 (2020)

[3] Ferroelectric Gating of Narrow Band-Gap Nanocrystal Arrays with Enhanced Light Matter Coupling, C. Gréboval, A. Chu, D. Vale Magalhaes, J. Ramade, J. Qu, P. Rastogi, A. Khalili, S.-S. Chee, H. Aubin, G. Vincent, S. Bals, C. Delerue, E. Lhuillier, ACS Phot 8, 259 (2021)

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