Small polaron formation in lead-free AgBi semiconductors for photovoltaic applications
Laura Herz a
a Department of Physics, University of Oxford, Clarendon Laboratory, Oxford, OX1 3PU, UK, Parks Road, Oxford, United Kingdom
Materials for Sustainable Development Conference (MATSUS)
Proceedings of nanoGe Fall Meeting 2021 (NFM21)
#LightMatter21. Light-Matter Interactions: From Fundamental Spectroscopy to Materials Design
Online, Spain, 2021 October 18th - 22nd
Organizers: Linn Leppert and Marina Filip
Invited Speaker, Laura Herz, presentation 034
DOI: https://doi.org/10.29363/nanoge.nfm.2021.034
Publication date: 23rd September 2021

Organic-inorganic metal halide perovskites have emerged as attractive materials for solar cells with power-conversion efficiencies now exceeding 25%. However, challenges and opportunities remain relating to material microstructure, ionic migration and toxicity.

We have recently investigated ultrafast charge-carrier dynamics in lead-free silver-bismuth semiconductors[1-3] which promise lower toxicity and potentially higher barriers against ion migration than their more prominent lead-halide counterparts. We examined the evolution of photoexcited charge carriers in the double perovskite Cs2AgBiBr6 using a combination of temperature-dependent photoluminescence, absorption and optical pump−terahertz probe spectroscopy.[1] We observe rapid decays in terahertz photoconductivity transients that reveal an ultrafast, barrier-free localization of free carriers on the time scale of 1.0 ps to an intrinsic small polaronic state. While the initially photogenerated delocalized charge carriers show bandlike transport, the self-trapped, small polaronic state exhibits temperature-activated mobilities, allowing the mobilities of both to still exceed 1 cm2V−1s−1 at room temperature. Self-trapped charge carriers subsequently diffuse to color centers, causing broad emission that is strongly red-shifted from a direct band edge. Overall, our observations suggest that strong electron−phonon coupling in this material induces rapid charge-carrier localization which may inhibit the use of this material as an efficient light harvester in photovoltaic devices.

We further demonstrate the novel lead-free semiconductor Cu2AgBiI6 which exhibits several advantages over Cs2AgBiBr6, namely a low exciton binding energy of ~29 meV and a lower and direct band gap near 2.1 eV,[2,3] making it a significantly more attractive lead-free material for photovoltaic applications. However, charge carriers in Cu2AgBiI6 are found to exhibit similarly strong charge-lattice coupling strength[3] to that in Cs2AgBiBr6, suggesting a link with the presence of AgBi. Tuning such charge-lattice interactions therefore emerges as a serious challenge for this class of materials.

Finally, we show that lead halide perovskites can exhibit intrinsic quantum confinement, apparent through surprising oscillatory features in the absorption spectrum.[4] Such materials may thus offer the sought-after target of bottom-up nanostructuring.

© FUNDACIO DE LA COMUNITAT VALENCIANA SCITO
We use our own and third party cookies for analysing and measuring usage of our website to improve our services. If you continue browsing, we consider accepting its use. You can check our Cookies Policy in which you will also find how to configure your web browser for the use of cookies. More info