Proceedings of nanoGe Fall Meeting 2021 (NFM21)
DOI: https://doi.org/10.29363/nanoge.nfm.2021.010
Publication date: 23rd September 2021
Photoluminescence is an ubiquitous technique featuring in fields ranging from bio-diagnostics, organic electronics to perovskite solar cells. This accessible characterization tool provides researchers a window into the optoelectronic properties of a semiconductor. What many don’t realize, however, is the extent to which the optical environment plays a role in the recorded spectrum, especially in thin films. Effects extrinsic to the emitting dipole obscure the intrinsic spectrum, making interpretation of experimental spectra non-trivial.
In our work we have developed a model that takes into account the effect of self-absorption and thin film interference of emitted light [1]. We demonstrate the impact of these on the photoluminescence lineshape of an organic semiconductor as a function of film thickness and incident angle. The experimentally determined spectral characteristics are found to differ as much as 60% from their intrinsic material value. The differences in lineshape are calculated to be especially sensitive to film thickness.
We experimentally verified the model by reversely applying it to a measured spectrum. Further, we retrieve the intrinsic spectrum of two non-fullerene acceptor films, allowing for a correct analysis of the impact of their two different fabrication methods on the optoelectronics.
Finally, we provide a chart for the general experimentalist to assess the extent of extrinsic influences on the measured spectrum as function of film thickness, bandgap and Stokes shift.
Taken together, our work aims to bridge the gap between experimentalist and optical modeler to aid in the correct analysis of spectra. We find there is a clear need to take into account the influence of extrinsic effects on the measured spectrum, and provide estimates on the relative impact for various film parameters.
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