Proceedings of nanoGe Fall Meeting19 (NFM19)
Publication date: 18th July 2019
Graphene Schottky Varactor Diodes for High-Performance Photodetection
Adi Levi*1,2, Moshe Kirshner*1,2, Ofer Sinai1,2, Eldad Peretz1,2, Ohad Meshulam1,2, Arnab Ghosh1,2, Noam Gotlib1,2, Chen Stern1,2, Shaofan Yuan3, Fengnian Xia3, and Doron Naveh1,2†
1 Faculty of Engineering, Bar-Ilan University, Ramat-Gan, Israel, 52900
2 Institute for Nanotechnology and Advanced Materials, Bar-Ilan University, Ramat-Gan, Israel, 52900
3 Department of Electrical Engineering, Yale University, New Haven CT 06511, USA
* These authors contributed equally to this work
† Corresponding author: doron.naveh@biu.ac.il
ABSTRACT
Over the past decade graphene devices have inspired the progress of future electronic and optoelectronic technologies. The unique combination of fast carrier dynamics and intrinsic quantum capacitance of graphene is a fertile ground for implementing novel device architectures. Here, we report on a novel device architecture comprising graphene Schottky diode varactors, and assess the potential applications of this type of new devices in optoelectronics. We show that graphene varactor diodes exhibit significant advantages compared with existing graphene photodetectors including elimination of high dark currents and enhancement of the external quantum efficiency (EQE). Our devices demonstrate a large photoconductive gain and EQE of up to 37%, fast photoresponse and low leakage currents at room temperature.
DN would like to thank the Israel Science Foundation for providing support for this research with grant No. 1055/15 and to the Israel Ministry of Defense for providing financial support to this grant with contract No. 16121. The authors would like to thank Dr. Gabriel Zeltzer and to Dr. Vlada Artel and Dr. Koushik Majhi for useful advice and discussions.