Proceedings of nanoGe Fall Meeting19 (NFM19)
Publication date: 18th July 2019
Development of high-performance solution processed electronic materials is one of the key product development targets of Organic Photovoltaics (OPVs) providing opportunities for roll to roll and printable electronics. Doped metal oxides have been extensively used as n-type or p-type buffer layers in inverted OPVs due to their high transparency, relatively high conductivity and tunable work function. Furthermore, the advantage of solution processing of these materials at low temperatures provide opportunities for low cost and up-scalable OPVs.[1,2] A high-performance low temperature solution processed electron selective contact consisting of 10 at% antimony doped tin oxide (ATO) and the neutral polymer polyethylenimine (PEI) is demonstrated.[3] Inverted organic photovoltaics utilizing ATO/PEI as electron selective contact exhibited high power conversion efficiencies for both the P3HT: PCBM and the non-fullerene based P3HT: IDTBR active layer OPV material systems.[3] Importantly it is shown that the proposed ATO/PEI carrier selective contact provides light soaking-free inverted OPVs. Furthermore, by increasing the thickness of ATO layer from 40 to 120 nm the power conversion efficiency of the corresponding inverted OPVs remain unaffected, a parameter which indicates the potential of the proposed ATO/PEI carrier selective contact for high performance light-soaking-free and reliable roll-to-roll printing solutions processed inverted OPVs.[3]
This project received funding from the European Research Council (ERC) under the European Union’s Horizon 2020 research and innovation program (Grant Agreement No. 647311).
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