III-V Colloidal Nanocrystals: Control over the Covalent Surfaces
Sohee Jeong a
a Sungkyunkwan University, South Korea, 300 Cheoncheon-dong, Jangan-gu, Suwon, 440, Korea, Republic of
Materials for Sustainable Development Conference (MATSUS)
Proceedings of nanoGe Fall Meeting19 (NFM19)
#NCFun19. Fundamental Processes in Semiconductor Nanocrystals
Berlin, Germany, 2019 November 3rd - 8th
Organizers: Ivan Infante and Jonathan Owen
Invited Speaker, Sohee Jeong, presentation 270
DOI: https://doi.org/10.29363/nanoge.nfm.2019.270
Publication date: 18th July 2019

Wet chemistry synthesis and size/shape control of colloidal III-V (InP, InAs) semiconductor nanocrystals has been challenging, compared to well-established synthetic solution chemistry for II-VI (CdSe, CdS) and IV-VI (PbS, PbSe) semiconductor nanocrystals. The difficulty stems largely from the limited choices of precursors suitable for solution chemistry of the III-V materials. Approaches on introducing clusters as a single source precursors has been attempted to control the kinetics of crystallization. At more fundamental level, however, the difficulty lies in the inherent covalency of the III-V materials, which does not allow an easy solution chemistry to control their surfaces. Therefore, the key is how to control the surface chemistry of rather covalent III-V materials.

Based on our previous experience on the atomic control of surface chemistry for IV-VI rock-salt materials, a novel surface chemistry of tetrahedrally-coordinated III-V colloidal quantum dots will be presented. Further control over the specific facet based on understanding of surface energy allow morphology evolution from tetrapod to tetrahedral shape.

This work was supported by the National Research Foundation of Korea (NRF) grant funded by the MSIP (2019R1A2B5B03070407).

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