Novel S-rich PbS QDs as a promising material for p-type layer in PbS QD solar cells
Dima Bederak a, Nataliia Sukharevksa a, Dmitry N. Dirin b c, Maksym V. Kovalenko b c, Maria A. Loi a
a University of Groningen, The Netherlands, Nijenborgh, 4, Groningen, Netherlands
b ETH Zürich, Department of Chemistry and Applied Biosciences, Switzerland, Switzerland
c EMPA - Swiss Federal Laboratories for Materials Science and Technology, Überland Strasse, 129, Dübendorf, Switzerland
Materials for Sustainable Development Conference (MATSUS)
Proceedings of nanoGe Fall Meeting19 (NFM19)
#NCFun19. Fundamental Processes in Semiconductor Nanocrystals
Berlin, Germany, 2019 November 3rd - 8th
Organizers: Ivan Infante and Jonathan Owen
Poster, Dima Bederak, 249
Publication date: 18th July 2019

PbS colloidal quantum dots (QDs) are solution-processable semiconductors, which have been widely used in a variety of optoelectronic and photovoltaic devices. Despite the progress in PbS QD solar cells and reaching the power conversion efficiency of 12.5%,[1] the most efficient solar cells are still containing PbS treated with 1,2-ethanedithiol (EDT) as a p-type layer. A higher degree of p-doping of EDT-treated PbS QDs is achieved by exposing the film to air. Also, the lack of p-type materials with high doping has been recently identified as a performance limiting factor of PbS QD solar cells.[2] This is related to the most common synthetic method of the QD synthesis – hot injection. After the synthesis, PbS QDs have an excess of Pb atoms which result in dominant n-type electronic properties. Tuning the Pb/S ratio was predicted and shown to be a powerful strategy to control the degree and type of doping in PbS QD films.[3,4]

In this work, a new synthesis of S-rich PbS QDs and a ligand exchange protocol were developed. Investigation of thin-film field-effect transistors with these S-rich QDs revealed prevailing hole transport with linear mobility of 1∙10-2 cm2/Vs without exposing devices to air.

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