Bright and Dark Exciton Emission in Two Dimensional Nanostructures
Anna Rodina a
a Ioffe Institute, Ioffe Institute,St. Petersburg, Russian Federation
Materials for Sustainable Development Conference (MATSUS)
Proceedings of nanoGe Fall Meeting19 (NFM19)
#Sol2D19. Two Dimensional Layered Semiconductors
Berlin, Germany, 2019 November 3rd - 8th
Organizers: Efrat Lifshitz, Cristiane Morais Smith and Doron Naveh
Invited Speaker, Anna Rodina, presentation 206
DOI: https://doi.org/10.29363/nanoge.nfm.2019.206
Publication date: 18th July 2019

We present a new theoretical analysis of the possibility to observe the low temperature photoluminescence (PL) stemming from the radiative recombination of bright (optically allowed)  and dark (optically forbidden) excitons. We consider both spin-forbidden and momentum- forbidden (indirect) dark excitons with different activation mechanisms of their radiative recombination. We discuss the cases of pulsed or continues wave resonant and non-resonant optical excitations and derive general expressions for the ratio between bright and dark exciton contributions to the PL intensities. The analysis of the experimental data for the low temperature PL as well as its dependencies on the temperature or external magnetic field based on these expressions allows one to make important conclusions about the exciton relaxation and recombination rates in the system. We apply the developed approach to the low temperature PL studies of CdSe colloidal nanoplateletes [1] and transition metal dichalcogenides (such as MoS2) flakes and nanotubes [2].

This work was partly supported by the Russian Science Foundation (Grant No. № 19-12-00273).

 

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