Interface Energetics and Photoelectrochemistry of MnOx-modified Ta-O-N Photoanodes
Rowshanak Irani a, Paul Plate a, Peter Bogdanoff a, Fatwa Firdaus Abdi a, Roel van de Krol a, Karsten Harbauer a
a Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Germany, Berlin, Germany
Materials for Sustainable Development Conference (MATSUS)
Proceedings of nanoGe Fall Meeting19 (NFM19)
#SolFuel19. Solar Fuel Synthesis: From Bio-inspired Catalysis to Devices
Berlin, Germany, 2019 November 3rd - 8th
Organizers: Roel van de Krol and Erwin Reisner
Oral, Rowshanak Irani, presentation 198
DOI: https://doi.org/10.29363/nanoge.nfm.2019.198
Publication date: 18th July 2019

Sustainable approaches in utilizing solar energy to produce chemical fuels would provide a way to meet the world increasing energy demand without the negative environmental effects of burning fossil fuels. One particularly interesting method is solar water splitting, where energy from sunlight is used to produce hydrogen and oxygen from water. In this process, an aqueous-stable semiconducting photoelectrode is required in order to sufficiently absorb visible light and efficiently oxidize/reduce water on its surface. Since water oxidation is typically the limiting reaction, many semiconductor photoelectrodes need to be decorated with additional water oxidation co-catalysts, such as CoPi, FeOOH, NiFeOx, and MnOx, in order to improve the performance [1-5]. However, the mechanisms at the semiconductor/co-catalyst interface and how they are influenced by the interface energetics are not yet fully understood. Here, we use a well-defined MnOx-based co-catalysts deposited by atomic layer deposition (ALD) and semiconducting Ta-O-N thin films as a model system in order to investigate the process. We successfully prepared different phases (e.g. Ta2O5, TaOxNy, Ta3N5) with varying valence band maximum positions by systematically controlling the partial pressure of NH3, H2 and H2O during post-annealing of Ta thin films [6]. The valence band position of the MnOx co-catalyst was also shifted by introducing Ni as dopant (Ni:MnOx). Photoelectrochemical studies with and without hole scavenger reveal that MnOx and Ni:MnOx enhances the photocurrent of Ta-O-N films by a factor of ~4 without affecting the charge injection efficiency. Therefore, higher charge separation efficiency should play the crucial role in the photocurrent increase. Open circuit potential (OCP) and in-line X-ray photoelectron spectroscopy (XPS) data suggested that this is attributed to the formation of a band bending at the Ta-O-N/MnOx and Ta-O-N/Ni:MnOx interface. This is further supported by analyzing Ta-O-N films with varying thickness of the co-catalysts; thicker co-catalysts result in increasing band bending, which correlates with the photocurrent trend as well as the effective carrier diffusion length measured by time-resolved microwave conductivity (TRMC). Finally, the influence of the band offsets between the different photoanode in the Ta-O-N systems and the co-catalysts is discussed.

This research was supported by the German Federal Ministry of Education and Research (BMBF), project “MANGAN” (03SF0505)

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