Proceedings of nanoGe Fall Meeting19 (NFM19)
DOI: https://doi.org/10.29363/nanoge.nfm.2019.178
Publication date: 18th July 2019
In recent years, halide perovskite light-emitting diodes have attracted a lot of attention. However, most high-performance devices degrade within seconds to minutes. This degradation has been attributed to the migration of mobile ions within the perovskite, impeding commercial applications. Recently it was shown that introducing manganese into perovskite light-emitting diodes enhances their brightness, efficiency, and stability. [1] However, the exact mechanism for these improvements is still under investigation.
We recently showed that transient ion drift is a powerful method to quantify activation energy, concentration, and diffusion coefficient of mobile ions in perovskite-based devices. [2] Here we use transient ion drift to study ion migration in perovskite light-emitting diodes with and without manganese addition. We find that the concentration of mobile ions is not influenced by manganese passivation, but that the diffusion coefficient is reduced from 4 x 10-11 cm2s-1 to 2 x 10-11 cm2s-1 and the activation energy is increased from 0.1 eV to 0.3 eV. These changes in the properties of mobile ions serve to rationalize the improved stability in perovskite light-emitting diodes upon magnesium passivation and will lead to a better understanding of ion migration and the influence of passivating agents on that migration and thus on the stability of the devices.
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