Proceedings of nanoGe Fall Meeting19 (NFM19)
DOI: https://doi.org/10.29363/nanoge.nfm.2019.175
Publication date: 18th July 2019
Interfaces and transport layers are crucial to high performance perovskite solar cells. However, so far the mechanisms behind the performance of particular materials and material combinations have not been well understood. In this talk we discuss the effect of transport, recombination and capacitance in interpreting the behaviour of several transport layers. In particular, we focus on TiO2 and MoOx.
For the TiO2/p+Si interface, we discuss the role of interface states and band alignment in achieving an Ohmic contact. This behaviour has previously been viewed as hopping within the TiO2. We have also see evidence in favour of band alignment shifts and against hopping conduction within thin layers of MoOx, demonstrating the need to perform several types of measurements supported by modelling to assign a mechanism.
Band offsets at interfaces can have several other effects on cell performance. We have seen that band alignment shifts together with improved conduction are able to improve performance of indium doped TiO2. We have also shown that band offsets can also affect hysteresis behaviour of perovskite solar cells, including leading to inverted hysteresis.
Finally, it is also important to consider the transport layers in assessing capacitance. For example, TiO2 can become depleted during capacitance measurements, which is important to take account of when interpreting the results.
For all of these types of measurements, experimental evidence is often indirect, and there for a combination of several types of measurements together with modelling of the mechanisms is required for a full understanding of the behaviour.
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