Proceedings of nanoGe Fall Meeting19 (NFM19)
DOI: https://doi.org/10.29363/nanoge.nfm.2019.157
Publication date: 18th July 2019
It is thought that growing large, oriented grains of perovskite can lead to more efficient devices. We compare two model systems, randomly oriented, small grain MAPbI3 films fabricated via antisolvent dripping (AS) and MAPbI3 films fabricated via Flash Infrared Annealing (FIRA) consisting of highly oriented, large grains. We measure the grain size, crystal structure and grain orientation using Electron Back-Scattered Diffraction (EBSD) and compare these to the optoelectronic properties as characterized by local photoluminescence and time-resolved microwave conductivity measurements. For the perovskites grown with FIRA, we find a spherulitic growth yielding large (tens of µm), highly oriented grains along the (112) and (200) planes in contrast to randomly oriented, smaller (400 nm) grains in the AS films. We observe a local enhancement and shift of the photoluminescence emission at different regions of the FIRA clusters, but these can be fully explained with variations in thickness, light-outcoupling, and self-absorption. We observe no effect of crystal orientation. Additionally, despite a substantial difference in grain size, we find that grain size does not play a major role in charge carrier mobilities and lifetime for the FIRA and AS films. These findings show that the orientation and size of crystalline domains in perovskite films are not necessarily related to their optoelectronic quality.
This work is part of the research program of the Netherlands Organization for Scientific Research (NWO).