Proceedings of nanoGe Fall Meeting19 (NFM19)
DOI: https://doi.org/10.29363/nanoge.nfm.2019.138
Publication date: 18th July 2019
The application of perovskite materials in the photovoltaic field has already led to a fast rise in conversion efficiency, currently above 24%. Thanks to their unique properties [1], these materials are also good candidates for tandem cells if used as the high bandgap subcell [2]. This is the long term goal of this work.
Here, we present an accepted optimized mono-cation perovskite formulation [3]: CH3NH3PbI3{Cl} (chlorine doped MAPbI3) for a development in both NIP and PIN-type structures, using the same materials for n-type and p-type layers: respectively, tin oxide (SnO2) and poly-triarylamine (PTAA). The perovskite layers deposited on either SnO2 and PTAA have been investigated with several characterization tools: UV-visible absorption, photoluminescence (PL), X-ray diffraction and photo-current (J-V) measurements in case of devices. Despite an un-similar PL behavior, we have found rather close properties for the two perovskites grown on either SnO2 and PTAA.
The integration of transparent electrode consisting in ITO deposited by sputtering at room temperature has also been scouted, as a proof of concept for semi-transparent perovskite solar cells for both NIP and PIN-type structures. Their respective J-V measurements have been performed and compared each other depending on the direction of light illumination (glass or metal side). We have notably noticed different current densities, which have been accurately correlated to optical losses calculations in reflection and absorption. Even if this developed PIN-type structure remains less efficient than the NIP one, obtained results highlight the fact that the PIN-type structure seems optically more favorable for a monolithic tandem application.
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