Proceedings of nanoGe Fall Meeting19 (NFM19)
DOI: https://doi.org/10.29363/nanoge.nfm.2019.136
Publication date: 18th July 2019
Recent years have seen a considerable development in the field of organic solar cells with efficiencies exceeding 16%. The charge transport in the active layer is generally understood to occur by a hopping mechanism for which many models have been proposed. From an application perspective, the extended Gaussian disorder model (eGDM) [1], which assumes nearest neighbor hopping (nnH) in a Gaussian density of states, has by far been most successful, and typically works well for p-type materials. We find it gives an inconsistent description for typical electron-only devices, significantly underestimating disorder.
Here we propose a more physical analytical variable range hopping (VRH) model which allows a consistent extraction of the hopping parameters from quasi steady state experiments, in particular T-dependent SCLC. The model has been calibrated by direct comparison to kinetic Monte Carlo simulations. It is tested for various material combinations, ranging from the highly studied TQ1: PCBM system (PCE » 6%) to high-performance non-fullerene binary and ternary systems such as PM6:Y6 (PCE » 16%). While for some materials a nnH model can still be applied, the major advantage of our model is that it provides a consistent description of all investigated material systems and can predict if nnH could be used alternatively. The TOC image below shows the Electron-only temperature dependent SCLC data (symbols) for TQ1:PCBM fitted using EGDM (blue dashes) and VRH model (red solid). The electron disorder as previously extracted from transients is 120 meV [2], VRH and nnH models give 119.68 meV and 100.4 meV, respectively.
We find that the main difference between p- and n-type transport lies in the significantly larger localization radius of the latter, while all other parameters (disorder, attempt rates etc.) are comparable for holes and electrons
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