Proceedings of nanoGe Fall Meeting19 (NFM19)
DOI: https://doi.org/10.29363/nanoge.nfm.2019.134
Publication date: 18th July 2019
ABSTRACT
All inorganic CsPbI3 perovskites are considered as alternatives to hybrid perovskite structures such as MAPbI3 and FAPbI3 due to their better stability. Despite their high potential for optoelectronic applications, they still suffer from stability under ambient conditions. CsPbI3 perovskites usually present in two phases: high temperature α-CsPbI3 phase and low temperature δ-CsPbI3 phase. The α-CsPbI3 phase is suitable for optoelectronic applications due to its 1.73 eV band gap. However, α-CsPbI3 phase is not thermodynamically stable at temperatures below 320 °C and transforms to non-perovskite δ-CsPbI3 phase which is not suitable for optoelectronic applications due to its high band gap of 2.26 eV. In order to utilize CsPbI3 perovskites in optoelectronic applications, the stability issue of α-CsPbI3 phase must be solved. In this study, Gd3+ ion was doped into the CsPbI3 perovskite structure to increase stability of the α-CsPbI3 phase in ambient conditions. Doped CsPbI3 nanocrystals (NCs) completely transformed to δ-CsPbI3 phase in 11 days, while undoped CsPbI3 NCs completely transformed to δ-CsPbI3 in 5 days. This prolonged phase stability can be originated from three potential reasons: increased Goldschmidt's tolerance factor, distorted cubic symmetry, and reduced defect density. Urbach energies of the samples suggest reduced defect density in the perovskite NCs. Furthermore, by doping α-CsPbI3 NCs with 10% moles Gd3+ ions, photoluminescence quantum yield (PLQY) is increased from 70% to 80% and flourescence lifetime of α-CsPbI3 is increased from 47.4 ns to 64.4 ns. Also, density functional theory (DFT) calculations are consistent with the experimental results.