Proceedings of nanoGe Fall Meeting19 (NFM19)
DOI: https://doi.org/10.29363/nanoge.nfm.2019.078
Publication date: 18th July 2019
Triple mesoporous layer devices containing a TiO2 electron transport layer, a ZrO2 insulating layer and carbon as the hole transporting contact show great promise for scale-up and widespread implementation. To improve these devices and begin to challenge inorganic PV record efficiencies a deeper understanding of their operation, and in particular sources of performance loss, is needed.
Our previous work has highlighted the extremely slow dynamic response of these devices under illumination and its links to interfacial recombination and ion migration.[1] One striking feature of these devices is the thickness of the layers – the mesoporous TiO2 and ZrO2 layers are each a few microns thick. The operation of these devices is therefore extremely sensitive to charge separation, transport and recombination properties. Added to this is the poor selectivity of the carbon electrode. Nevertheless, despite these unusual device properties, efficiencies in excess of 15% have been achieved. The one noticeable deficiency relative to other perovskite device architectures is a lower open-circuit voltage – typical maximum of around 0.9 V.
We have probed the recombination behaviour in these devices, specifically focusing on spectral dependence to study the impact of light penetration depth (where charges are generated), using a range of techniques including transient photovoltage spectroscopy (TPV), impedance spectroscopy (EIS) and time-resolved photoluminescence (TRPL). By varying the thickness of the TiO2 and ZrO2 layers we have begun to understand the main source of recombination loss in these devices, which has allowed us to optimize the device architecture.
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