Proceedings of nanoGe Fall Meeting19 (NFM19)
DOI: https://doi.org/10.29363/nanoge.nfm.2019.066
Publication date: 18th July 2019
Many of the physical and engineering aspects that govern the behavior of perovskite photovoltaics occur at interfaces. Especially, the metal oxide-perovskite interface is of great importance for inverted perovskite PV operation, and control of the interface materials properties is critical for high performance photovoltaics [1,2]. We have recently reported the synthesis of a low-temperature solution-processable monodispersed nickel cobaltite (NiCo2O4) as a hole transporting layer for inverted perovskite PVs [1]. We have shown that metal oxide interface materials influence the perovskite grain boundaries formation [2] and that control of metal oxides interfacial energetics through doping (please see TOC figure) are beneficial for inducing a desired PV device functionality [3]. Hence, the development of intimate interfaces through their fundamental understanding and manipulation is expected to be crucial to the continued progress of perovskite PVs. Up to now the main efforts of the perovskite research community have been focused on improving the power conversion efficiency (PCE). There are fewer reports on the degradation of perovskite PVs. We have recently reported hear improved stability of inverted perovskite photovoltaics by incorporation of fullerene-based diffusion blocking layer [4]. However, the effect of metal-oxide interfacial layers on lifetime performance remain unclear. The presentation aims in covering a range of electronic materials for high performance perovskite photovoltaics. A systematic understanding of the relationship between interface materials [1-3] and inverted perovskite photovoltaic power conversion efficiency [2-3] and lifetime performance [4] will be presented.
Funding from the European Research Council (ERC) under the European Union’s Horizon 2020 research and innovation programme (H2020-ERC-2014-GoG project number 647311) is gratefully acknowledged.
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