Proceedings of nanoGe Fall Meeting19 (NFM19)
DOI: https://doi.org/10.29363/nanoge.nfm.2019.060
Publication date: 18th July 2019
We use photoemission line scans on small angle tapered cross sections of a wet chemically produced MA0.85FA0.15PbI0.85Br0.15 solar cell of 18% efficiency to reveal the potential distributions across the full device in the dark and operating under open circuit illumination. We find the perovskite absorber to be n-type and the hole extraction contact of p-type spiro-MeOTAD with Au on top photoactive, while the electron extraction contact of meso-porous n-type TiO2 on TiO2 hole blocking layer shows little activity. In addition the perovskite layer formed from a single precursor solution shows self organized depth variations in the chemical analysis. In particular, the bromide concentration is increased while iodide is reduced in front of and within the meso-porous TiO2 layer. The approach of photoemission analysis on tapered cross sections is generally applicable to different types of microelectronic thin film devices allowing for detailed electronic and chemical analysis under working condition as demonstrated here for operation under open circuit illumination of a perovskite solar cell.
The spectroscopic elementspecific information is used to identify the respective device layers. We found that the absorber is n-type and the device shows a n-n-p structure, in contrast to the generally assumed n-i-p structure. Our measurements reveal that the photovoltage mainly develops at the back contact within the spiro-MeOTAD layer, where in the dark band bending was strongest.
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