Water-splitting Photoelectrochemical Cells Based on Carbon Nitride Materials: Progress through Improved Deposition Techniques
Michael Volokh a, Menny Shalom a
a Ben-Gurion University of the Negev, Israel, Beer-Sheva, Israel
Materials for Sustainable Development Conference (MATSUS)
Proceedings of nanoGe Fall Meeting19 (NFM19)
#SolFuel19. Solar Fuel Synthesis: From Bio-inspired Catalysis to Devices
Berlin, Germany, 2019 November 3rd - 8th
Organizers: Roel van de Krol and Erwin Reisner
Oral, Michael Volokh, presentation 051
DOI: https://doi.org/10.29363/nanoge.nfm.2019.051
Publication date: 18th July 2019

Water-splitting photoelectrochemical cells based on carbon nitride materials: progress through improved deposition techniques



Carbon nitride materials (CNs) are an emerging class of materials, which exhibit excellent photo- and heterogeneous-catalytic properties for various reactions thanks to their tunable band gap, suitable energy-band position, high stability under harsh chemical conditions, and low cost. However, the utilization of CN in photoelectrochemical (PEC) and other photoelectronic devices is yet to be wide-spread due to the difficulties in depositing high-quality and homogenous CN layer on substrates, the wide band gap of ‘intrinsic’ CN, poor charge-separation efficiency, and low electronic conductivity.[1]

We present recent synthetic progress achieved in our group through several pathways for the preparation of various structures of CN on substrates and their underlying photophysical properties and photoelectrochemical performance. We focus on the ‘doctor-blade’ technique for deposition of a paste of supramolecular assemblies.[2] We show how the incorporation of reduced graphene oxide[3] and graphene oxide[4] at different stages alters the properties of the paste and the final CN-based layer. Furthermore, we show a method to fabricate closely-packed CN film using crystallization of monomers.[5] The main challenges for CN incorporation into PEC cell are described, together with possible routes to overcome the standing limitations toward the integration of CN materials in photoelectronic devices.[1]

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