Proceedings of nanoGe Fall Meeting19 (NFM19)
DOI: https://doi.org/10.29363/nanoge.nfm.2019.041
Publication date: 18th July 2019
Understanding and controlling the electrochemical properties of semiconductor nanomaterials is of great importance. These electrochemical properties include non-radiative recombination (i.e. electron and hole trapping are redox reactions), the stability of nanomaterials (i.e. many decomposition pathways are redox reactions) and the (im)possibility of electronic doping.
We use electrochemistry to control the Fermi-level in films of colloidal nanomaterials. This can result in filling of electron/hole traps in the bandgap and/or in n or p doping by the introduction of electrons (holes) into the conduction (valence) band. I will present how this can be used to probe electron/hole traps in the band gap of CdSe/CdS/ZnS QDs and nanoplatelets via spectroelectrochemistry. I will discuss how certain traps are actually formed by the introduction of charges, and how this may be avoided by proper control of the surface.[1]
Electrochemical control over the density of electrons or holes can be of great importance for the rational design of semiconductor devices such as LEDs, solar cells and lasers. For instance, it is known that the lasing threshold in semiconductor lasers is reduced by doping. I will discuss the systematic reduction of the optical gain threshold in CdSe/CdS/ZnS QD films, studied by a combination of electrochemical doping and ultrafast transient absorption spectroscopy.
Finally, I will discuss recent attempts to stabilize the charge density after electrochemical doping, so that electrochemical control over de doping density may be used to create functional devices.
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