Growth and Device Integration of 2D Materials for Optoelectronic Applications
Gerd Bacher a
a Werkstoffe der Elektrotechnik and CENIDE, University Duisburg-Essen
Materials for Sustainable Development Conference (MATSUS)
Proceedings of nanoGe Fall Meeting19 (NFM19)
#Sol2D19. Two Dimensional Layered Semiconductors
Berlin, Germany, 2019 November 3rd - 8th
Organizers: Efrat Lifshitz, Cristiane Morais Smith and Doron Naveh
Invited Speaker, Gerd Bacher, presentation 033
DOI: https://doi.org/10.29363/nanoge.nfm.2019.033
Publication date: 18th July 2019

Atomically thin layers represent a novel class of materials with unique properties, like e.g. high electrical conductivity combined with high transparency in graphene or efficient light absorption and emission in transition metal dichalcogenides (TMDCs). Originally prepared by mechanical exfoliation for more basic scientific studies, recent developments in large area CVD growth techniques paved the path towards practical applications.

In this contribution some of our recent efforts on 2D materials for optoelectronic applications will be presented. This includes CVD growth of graphene and its application as transparent electrode in blue GaInN/GaN light emitting devices (LEDs). Hereby, we use a plasma-enhanced growth procedure developed by us for Cu substrates [1] and transferred thereafter to GaN-based substrates. Strong lateral current spreading, and a reduced turn-on voltage indicate the suitability of our approach. In addition, large area fabrication approaches of TMDCs via MOCVD growth were developed. High quality films for both, MoS2 as well as WSmonolayers have been realized and were analyzed via confocal optical spectroscopy [2]. A scalable p-n device design was established using inorganic and organic supporting layers for electron and hole injection, respectively [3]. Subsequently, the architecture was adapted for including MOCVD grown WS2 monolayers as active material emitting in the red spectral range. Large area electroluminescence stemming from the TMDC layer with a turn-on voltage as low as 2.5 V has been achieved, demonstrating the potential of 2D semiconductors for optoelectronic devices in a scalable approach.

The research leading to these results has received funding from the European Regional Development Fund ERDF 2014-2020 of the European Union (contract no. EFRE-0800154) and from the Ministry of Economic Affairs, Innovation, Digitalization and Energy of the State of North Rhine-Westphalia. We also acknowledge financial support from the Deutsche Forschungsgemeinschaft under contract Ba 1422/21.

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