Proceedings of nanoGe Fall Meeting19 (NFM19)
DOI: https://doi.org/10.29363/nanoge.nfm.2019.023
Publication date: 18th July 2019
Intensity dependent photocurrent (IPC) measurements are a commonly used technique to investigate photocurrent losses in photovoltaic devices as a function of the incident light intensity under different operational device conditions. In particular, such measurements are able to identify recombination processes which are dominant at particular light intensities.[1], [2] Here, we investigate first- and higher-order recombination processes and photocurrent loss mechanisms on different variants of thin film solar cells from sensitive IPC measurements performed over a broad range of light intensities and present a summary of their dependencies and precise identification. We show in particular that in the presence of trap states two linear photocurrent regimes can be identified.[3] Aided by one-dimensional Drift Diffusion (DD) simulations we present a model that can explain their origin based on trap-assisted Shockley-Read-Hall (SRH) recombination and a trap filling that leads to a charge build-up. By relating the light irradiance and open-circuit voltage, at which the transition between the two linear photocurrent regimes occurs, we can estimate the trap depth and density, which is in good agreement with the theoretical, predicted values. In combination, broad dynamic range IPC and DD simulations provide a powerful tool to probe and quantify the mechanistic aspects of photocurrent losses in solar cells.
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