Proceedings of nanoGe Fall Meeting 2018 (NFM18)
DOI: https://doi.org/10.29363/nanoge.nfm.2018.341
Publication date: 6th July 2018
Scattering-type scanning near-field optical microscopy (s-SNOM) has emerged as a key technology to gain chemical information, study structural properties and observe charge carrier distributions on the 10 nm length-scale. s-SNOM employs a metallic AFM tip which is illuminated to create a 10 nm small optical hot-spot at the tip apex independent from the wavelength of incident light. The concentrated light in the optical hotspot interacts with the sample surface below the tip and is modified by the local dielectric properties (absorption, reflection) of the sample. Detection of the elastically scattered light simultaneous to AFM imaging yields near-field images and broadband near-field spectra (nano-FTIR) with <20 nm spatial resolution. [1]
Using infrared s-SNOM imaging, the free carrier distribution in Bi2Se3 plates could be determined and it could be revealed that polyol-synthesized plates feature a non-uniform distribution of Se vacancies which cannot be cured by post-annealing. CVD-grown Bi2Se3 plates on the contrary don’t show such inhomogeneities. [2]
Furthermore s-SNOM images, recorded using mid-IR light, reveals the highly symmetric optical pattern of solvothermally grown Sb2Te3 hexagonal nanoplatelets. The superordinate optical patterns of the spiral growth patterns are shown to represent domains of distinct electronic properties, resulting from so-called growth twins with different densities of antisite defects. [3]
References:
[1] F. Huth et al., Nano Lett. 2012, 12, 3973
[2] X. Lu et al., Adv. Electron. Mater., 2018, 4, 1700377
[3] B. Hauer et al., Nano Lett., 2015, 15 (5), 2787
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