Proceedings of nanoGe Fall Meeting 2018 (NFM18)
Publication date: 6th July 2018
The development of metal oxide semiconductors as photoelectrode materials in solar water splitting is often hampered by the slow surface reaction kinetics for oxygen evolution reaction (OER). To overcome this, their surfaces are typically modified by depositing earth abundant, efficient, and inexpensive water oxidation co-catalysts, such as CoPi, FeOOH, NiFeOx, and MnOx [1, 2, 3, 4, 5]. As a result, the photocurrents of the catalyst-modified photoelectrodes are improved, but the enhancement mechanism is often not clear. Several studies have shed light onto the mechanism [6, 7, 8], but the charge transfer processes through the semiconductor-catalyst interface are not yet fully understood. In this study, we investigate the role of atomic layer deposited (ALD) MnOx co-catalyst on BiVO4 photoanodes. ALD allows conformal deposition of very thin layers and therefore an accurate control of the thickness of the co-catalyst. We found that there is an optimum MnOx thickness of ~4 nm; the optimized MnOx/BiVO4 sample showed lower onset potential (by ~100 mV) as well as higher photocurrent (a factor of > 3) as compared to the bare BiVO4. Intensity modulated photocurrent spectroscopy (IMPS) measurements revealed that the optimized MnOx/BiVO4 sample possess lower surface recombination rate constant, while the charge transfer rate constant is relatively unaffected. Through careful study of the dark current, their morphology as well as by applying Al2O3 as the interfacial back contact layer, we confirmed that no shunting effect of the co-catalyst is taking place [6]. Instead, we attribute the enhancement in the optimized sample to the competition between the passivation of surface states causing recombination and the intrinsic resistance of the MnOx layer [9]. This is further confirmed by steady-state Hall conductivity and time-resolved microwave conductivity (TRMC) measurements. Overall, our study provides additional insights to the general understanding of the charge transfer processes occurring at the semiconductor-catalyst interface.