Proceedings of nanoGe Fall Meeting 2018 (NFM18)
Publication date: 6th July 2018
In the development of photoanodes for light-induced water oxidation it is often essential to deposit a co-catalyst that either passivates surface states at the electrode/electrolyte interface or catalyzes the oxygen evolution reaction (OER). In this contribution we demonstrate the influence of cobalt as well as manganese oxide/hydroxide on semiconducting and photosensitive iron tungstenate Fe2WO6 layers. Thin films of amorphous CoOxOHy and MnOxOHy were deposited on this ternary oxide [1-3], a novel semiconductor with an indirect/direct band gap of 1.7 eV and 2.4 eV. After deposition of a CoOxOHy film on top of the electrode the photocurrent density could be doubled while in case of amorphous MnOxOHy the onset potential under illumination could be shifted by ~250mV. Annealing the electrodes after photoelectrodeposition of MnOxOHy at 500°C, crystalline a‑Mn2O3 is formed. However, after this treatment the photosensitivity of the electrode is completely lost. This behavior can be explained by a reaction of Mn2O3 with Fe2WO6 under formation of a (Fe1-xMnx)2WO6 interface layer acting as a trap for excited charge carrieres. Our results show that the deposition of amorphous co-catalysts on iron tungstenate films can strongly influence its photoelectrochemical performance.