Proceedings of nanoGe Fall Meeting 2018 (NFM18)
DOI: https://doi.org/10.29363/nanoge.nfm.2018.266
Publication date: 6th July 2018
More than 30% of the production cost of commercial solar modules can be attributed to the cost of silicon and wafering. As a result, silicon wafers have reduced their thickness from 350 µm down to 180 µm. However, current sawing technology is reaching its inherent limits due to reduced yield and excessive kerf losses. Here we report on a method that can produce multiple free-standing ultra-thin (<20 µm) silicon layers from one silicon wafer and in a single technological process. This method, that we call “Silicon Millefeuille”, is based on the reorganization of close-packed arrays of pores under a high-temperature annealing in Ar:H ambient. The transformation process takes place in solid phase by surface diffusion, what results in the formation of high-quality monocrystalline thin layers that can later be peeled off into independent ultra-thin substrates. Pores are produced by electrochemical dissolution of n-type silicon in HF solution under back-side illumination. This allows to introduce an in-depth periodic modulation of the pore diameter that defines the number and thickness of the layers produced after the annealing. Furthermore, we show that the precise control of the initial in-depth pore profile has a profound impact on the pore reorganization dynamics, allowing to control the morphology of the thin layers obtained through annealing.
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