Organic semiconductors based on conjugated polymers and fullerene acceptors are a large class of materials that have been broadly explored for various applications that allow printed, flexible, stretchable, and large-area electronics like organic field-effect transistors (OFETs) and bulk-heterojunction organic photovoltaics (OPVs). The commercialization of large area photovoltaic devices relies on the capability of coating thick active layers in ambient condition without losing the efficiency. After surpassing the 13% threshold, OPVs becomes a promising approach in the field of thin film photovoltaic technology  but it is limited to thin film only. Till now the performance of scalable printed solar cells is quite low as compared to spin coated devices. In OPVs the photoactive layer, which consists of donor and acceptor materials plays an important role. Initially, the focus of OPV research was limited to fullerene based acceptor PC61BM and PC71BM ([6,6]-phenyl C61-/C71-butyric acid methyl ester). The fullerene based acceptors have some limitations to achieve high efficiency like low absorption coefficient and narrow visible absorption window limiting the light-to-current generation, thus inhibiting the improvement of device performance . From the last few years, non - fullerene acceptors (NFAs) have emerged as a new concept to overcome the limitations associated with fullerene based acceptors.

In this work, we used blend of poly[4,8-bis(5-(2-ethylhexyl)thiophen-2-yl) benzo[1,2-b;4,5-b′]dithiophene-2,6-diyl-alt-(4-(2-ethylhexyl)-3-fluorothieno[3,4-b]thiophene-)-2 carboxylate-2-6-diyl)] (PBDTTT-EFT, or more commonly PCE10) : PC71BM (fullerene based) and PBDTTT-EFT: EH-IDTBR (NFA) as an active layer material. We used the wire-bar (WB) coating as well as spin coating (SC) to deposit the active layer of PCE10:PC71BM and PCE10: EH-IDTBR . Thicker active layer (>100 nm) devices based on WB coated shows good performance as compared to devices based on thicker active layer coated by SC. Comparison of the film properties as well as device performance has been carried out when we change the process form lab to scalable (SC to WB) technique. Solar cell (ITO/ZnO/PCE10:PC71BM/MoO3/Ag) based on WB coated PCE10:PC71BM results the PCE of 10.22 % comparable to the device based on SC PCE10:PC71BM with PCE of 10.10%. Devices based on NFAs (ITO/ZnO/PCE10: EH-IDTBR/MoO3/Ag) shows comparatively good performance with PCE of 10.77% for WB coated and PCE of 10.60% for SC devices. Reported WB coating technique approximating scalable fabrication methods and hold great promise for the development of low-cost and high-efficiency OSCs by high-throughput production.