Improving BiVO4 thin Film Photoanodes for Light-Induced Water Oxidation
Martin Rohloff a b c, Björn Anke c, Spark Zhang d, Christina Scheu d, Martin Lerch c, Anna Fischer a b
a University Freiburg, IAAC, Germany
b University Freiburg, FIT, Germany, Germany
c Technical University of Berlin (TU), Straße des 17. Juni, Berlin, Germany
d Max-Planck-Institut für Eisenforschung, Germany
Materials for Sustainable Development Conference (MATSUS)
Proceedings of nanoGe Fall Meeting 2018 (NFM18)
S2 Light Driven Water Splitting
Torremolinos, Spain, 2018 October 22nd - 26th
Organizers: Wolfram Jaegermann and Bernhard Kaiser
Invited Speaker, Anna Fischer, presentation 197
DOI: https://doi.org/10.29363/nanoge.nfm.2018.197
Publication date: 6th July 2018

The n-type semiconductor bismuth vanadate (BiVO4) is a promising material as photoanode for light induced water oxidation. Its absorption in the visible range (band gap energy of 2.4 eV), its suitable band edge positions compared to the OER half reaction, its stability against photo-corrosion as well as its low cost make BiVO4 one of the most interesting ternary oxide materials for light-induced oxygen evolution from water.1 One major drawback for BiVO4 is its poor electronic conductivity, which can however be overcome by applying three strategies: i) adjustment of thin film properties (especially thickness), ii) n-type doping by cation and more recently anion substitution and iii) heterojunction design (type II). Within the present talk, I will give an overview of the improvements we achieved for novel sol-gel based BiVO4 thin film photoanodes following each of these strategies allowing us to go all the way from low to high performance BiVO4 photoanodes.

First we developed a new, sol-gel-based synthesis involving simple dip-coating and calcination allowing the easy and reproducible fabrication of porous BiVO4 and Mo‑doped BiVO4 thin film photoanodes.2 The obtained thin films crystallize in the monoclinic scheelite structure in micrometre large, two-dimensional, single-crystalline porous domains with wall features in the range of the hole diffusion length of BiVO4. Optimization of the electron transport properties resulting in higher PEC performance was realized by cation and anion doping using Molybdenum and Fluorine, respectively.3 Finally, our new synthesis approach could be easily applied for the fabrication of BiVO4/WO3 type II heterojunctions following a simple layer-by-layer deposition. It is shown that precise control of the layer morphology and the overlapping interface between the layers is an indispensable prerequisite for high performance WO3/BiVO4 heterojunction photoanodes.

This work was funded by the DFG SPP1613 program.

1 Z.-F. Huang, L. Pan, J.-J. Zou, X. Zhang, L. Wang, Nanoscale 2014, 6, 14044.

2 M. Rohloff, B. Anke, S. Zhang, U. Gernert, C. Scheu, M. Lerch, A. Fischer, Sustainable Energy Fuels 2017, 1, 1830.

3 B. Anke, M. Rohloff, M. G. Willinger, W. Hetaba, A. Fischer, M. Lerch, Solid State Sci. 2017, 63, 1.

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