Proceedings of nanoGe Fall Meeting 2018 (NFM18)
DOI: https://doi.org/10.29363/nanoge.nfm.2018.107
Publication date: 6th July 2018
In perovskite solar cells, achieving consistency in device fabrication is very difficult. Although it easy to measure whether a solar cell performs well, it is not always easy to determine what the problem is in case of a bad solar cell. Many devices that show less than ideal performance show a feature called an ‘s-shape’, where in the JV-characteristic a region exists where the second derivative of the current with respect to voltage is negative. If this s-shape occurs below Voc, this will dramatically decrease the fill factor. Until now some possible causes are known. It has been shown using drift diffusion simulations that in perovskite solar cells, s-shapes can exist under forward bias. Also from organic solar cells it is well known that poor charge transport can lead to s-shapes, but no comprehensive explanation has been shown on these s-shapes in perovskites as of yet.
In this contribution we identify all the processes and parameters that yield s-shapes in the JV-characteristic and can therefore give a complete story on the phenomenon of s-shapes in perovskite solar cells. Furthermore, the occurrence of s-shapes is linked to device characteristics such as transport layer mobility and effects such as charge buildup at certain bias voltages. This is done using very large amounts of simulated solar cells with different parameters, where parameters are chosen such that the whole parameter space of solar cells yielding s-shapes is swept. Each individual solar cell simulation is a drift diffusion simulation including mobile ions where n-i-p or p-i-n structures are assumed. The conclusions from the modeling can be used to pinpoint weak spots of fabricated solar cells and help improve device recipes and fabrication.
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