Proceedings of nanoGe Fall Meeting 2018 (NFM18)
DOI: https://doi.org/10.29363/nanoge.nfm.2018.104
Publication date: 6th July 2018
The formation of bound excitons via the spatial localization of charge carriers has long been a goal for luminescent semiconductors. Often, this has been accomplished through the formation of nanocrystals either through top-down or bottom-up methods. Alternatively, zero dimensional (0D) materials structurally impose carrier localization and result in the formation of highly localized Frenkel excitons. Recent works on perovskite-derived, hybrid organic-inorganic, 0D Sn(II) materials have demonstrated that high quantum yield emission from self-trapped excitons is possible when octahedra are isolated. As a new entry to the family of luminescent 0D materials, the fully-inorganic, perovskite-derived Cs4SnBr6 exhibits broad-band photoluminescence centred at 540 nm with a quantum yield of 15±5% at room temperature.[1] A compositional series, following the general formula Cs4-xAxSn(Br1-yIy)6 (A = Rb, K; x ≤ 1,y ≤ 1), can be synthesized by solid-state methods. Furthermore, the emission of these materials ranges from 500 nm – 620 nm with the possibility to compositionally tune the Stokes shift and the self-trapped exciton emission bands. Finally, utilizing density functional theory calculations, the self-trapped exciton was ascribed to pseudo-Jahn-Teller distorted octahedra.
[1] Benin, B.M.,*; Dirin, D.N.*; Morad, V.; Woerle, M.; Yakunin, S.; Raino, G.; Nazarenko, O.; Fischer, M.; Infante, I.; Kovalenko, M.V. submitted.
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